inchange semiconductor isc product specification isc silicon npn power transistor 2SC3659 description high breakdown voltage- : v ces = 1700v (min) built-in damper didoe applications designed for high voltage, high pow er switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector-emitter voltage 1700 v v ebo emitter-base voltage 6 v i c collector current- continuous 8 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -45~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3659 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1.25a b 2.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1.25a b 1.5 v i cbo collector cutoff current v ce = 1400v; i e = 0 0.5 ma i ebo emitter cutoff current v eb = 6v; i c = 0 500 ma v ecf c-e diode forward voltage i f = 6a 2.0 v t f fall time i c = 5a, i b 1 = 1a, i b 2 = -2.5a, l b = 0 0.5 s isc website www.iscsemi.cn 2
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